| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress an external diffusion of a IV-element from a light emitting layer in a boron phosphide group semiconductor light emitting element, and to maintain an atom concentration of the IV-element in the light emitting layer at optimum concentration from the viewpoint of light emission intensity. <P>SOLUTION: The boron phosphide group semiconductor light emitting element is provided with the light emitting layer consisting of a first boron phosphide group semiconductor layer, and a III-V semiconductor layer obtained by intentionally adding the IV-element and pn junction type hetero junction structure consisting of a second boron phosphide group semiconductor layer. The first boron phosphide group semiconductor layer is constituted of an undoped first conductive boron phosphide group semiconductor containing the IV-element, and the second boron phosphide group semiconductor layer is constituted of a second conductive boron phosphide group semiconductor layer containing the IV-element. <P>COPYRIGHT: (C)2003,JPO |
