发明名称 MANUFACTURING METHOD OF LOW RESISTANCE TRANSPARENT CONDUCTIVE FILM
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method of a thin transparent conductive film which has low sintering temperatures and low electric resistances after sintering. SOLUTION: After applying onto a substrate to be treated a dispersion liquid including fineparticles of at least one kind of each component metal in a metal oxide for forming the transparent conductive film or fine particles of at least one kind of alloy composed of each component metal, in an oxygen gas or an ozone gas atmosphere under atmospheric pressure, or in a plasma atmosphere of a gas in which an oxygen gas or an ozone gas is added to a helium gas, the substrate is oxidized and sintered simultaneously by being heated at 150°C to 250°C to form the transparent conductive film composed of the metal oxide. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003249132(A) 申请公布日期 2003.09.05
申请号 JP20020050299 申请日期 2002.02.26
申请人 ULVAC JAPAN LTD 发明人 KAWAMURA HIROAKI;TAKEI HIDEO;ISHIBASHI AKIRA
分类号 G02F1/1343;H01B13/00;H01L51/50;H05B33/14;H05B33/28;(IPC1-7):H01B13/00;G02F1/134 主分类号 G02F1/1343
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