发明名称 ANTI-FUSE AND WRITING METHOD THEREOF
摘要 <p><P>PROBLEM TO BE SOLVED: To provide an anti-fuse and its writing method which realize the cost reduction and the fining of a semiconductor device, etc. <P>SOLUTION: The anti-fuse 23 is composed of a substitutable layer 14 and a wiring layer 20, having metal atoms substitutable for constituent atoms of the substitutable layer. For writing in the anti-fuse, at least either the substitutable layer or the wiring layer is heated by a laser radiation means, etc., to substitute the metal atoms in the wiring layer for the constituent atoms in the substitutable layer, thereby changing the substitutable layer from a non- conducting state to a conducting state. <P>COPYRIGHT: (C)2003,JPO</p>
申请公布号 JP2003249553(A) 申请公布日期 2003.09.05
申请号 JP20020049423 申请日期 2002.02.26
申请人 FUJITSU LTD 发明人 NAKAMURA SHUNJI
分类号 H01L23/52;H01L21/3205;H01L21/82;H01L23/525;(IPC1-7):H01L21/82;H01L21/320 主分类号 H01L23/52
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