| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a photomask blank of high accuracy which is improved in chemical resistance, is slight in a change of optical characteristics by cleaning, etc., in manufacturing or using the mask and is small in total film stress and a photomask. <P>SOLUTION: The photomask blank has at least one light shielding film and at least one antireflection film on a transparent substrate transmitting exposure light, in which an amount of a change in reflectivity at a wavelength 248 to 600 nm before and after immersion for two hours in concentrated sulfuric acid of 100°C is≤2%. <P>COPYRIGHT: (C)2003,JPO</p> |
