| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile memory device in which margin of threshold determination voltage for read voltage is made small, time required for write and erasure is shortened, and stable operation can be performed, even when power source voltage is varied. <P>SOLUTION: In reading or erasing data, write determination voltage or erasure determination voltage is applied to a control gate of a memory transistor, a write or erasure result is determined on the basis of the level of the drain current. Either of this write determination voltage and erasure determination voltage is selectively generated by a voltage regulator on the basis of output voltage of a band gap constant voltage generation means. <P>COPYRIGHT: (C)2003,JPO</p> |
