| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing composition for CMP processing which has high selectivity of large copper polishing rate but small tantalum compound polishing rate, and is excellent in flatness of a copper film surface in CMP process of a semiconductor device with a copper film and tantalum compound. <P>SOLUTION: The polishing composition consists of (A) a polishing material, (B) pyrazinecarboxylic acid and/or 2,3-pyrazinecarboxylic acid, (C) hydrogen peroxide and (D) water. The polishing material is a composition which consists of at least one kind of fumed silica, colloidal silica, fumed alumina and colloidal alumina. Primary particle of the polishing material is 0.01 to 0.2μm and its concentration in the polishing composition is 5 to 30 wt.%. <P>COPYRIGHT: (C)2003,JPO</p> |
