| 摘要 |
PROBLEM TO BE SOLVED: To restrain incorrect writing and concentrate a magnetic field to a selection cell. SOLUTION: A semiconductor memory device is equipped with first wirings 13 extended into a first direction, memory elements 18 arranged above the first wirings 13, second wirings 20 extended on the memory elements 18 into a second direction different from the first direction, and magnetic shield layers 21 formed on the side surface of the second wirings 20 and the side surface of the memory elements 18. COPYRIGHT: (C)2003,JPO
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