| 摘要 |
PROBLEM TO BE SOLVED: To provide an impurity well where the configuration of a mask is kept unchanged up to an end surface at a deep portion, and particularly a boundary of impurity concentration along a cross section of the mask is made steep for formation of the impurity to a semiconductor substrate. SOLUTION: There is provided a method for forming an impurity well 5 by ion implanting an impurity atom from a parallel direction (incident angle) within 2<SP>0</SP>into any one surface of ä110}, ä111}, ä100} or ä211} of the semiconductor substrate 1-1. It is hereby possible to form an impurity well where the configuration of a mask is kept unchanged up to an end surface of a deep portion, and particularly a boundary of impurity concentration along a cross section of the mask is steep. COPYRIGHT: (C)2003,JPO
|
