| 摘要 |
PROBLEM TO BE SOLVED: To provide a back grinding method which reduces a dispersion in thickness inside a chip after back grinding of a semiconductor wafer, and a semiconductor device and its manufacturing method. SOLUTION: A wafer 11 has a product chip 12 wherein a semiconductor element is formed and a plurality of bumps formed in the chip 12. The wafer 11 is prepared, having a dummy chip 13 formed in a region 2 mm or more inside from an outermost circumference of a wafer surface and a dummy bump which is formed in a dummy chip and is disposed in a position similar to a bump formed in a product chip. A dummy bump is formed in a region 2 mm or more inside from an outermost circumference of a wafer surface. A protection tape is stuck to the surface of the wafer 11 and a wafer is held by vacuum suction of the protection tape by a vacuum suction disc. The back of the wafer 11 is ground by pressing the back of the semiconductor wafer 11 held by a vacuum suction disc to a surface of a rotary grinding disc is revolving. COPYRIGHT: (C)2003,JPO
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