| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device in which an arbitrary column replacement unit can be selected and efficiency of circuit design and pattern design can be improved remarkably. SOLUTION: X0-X6 of low-order 7 bits of a row address signal out of address signals AD of a defective cell are outputted to a spare column decoder 16. Also, high-order bits X7, X8 of the row address are outputted to a spare column decoder 17, and one of sections 15-1 to 4 of a spare cell array 15 is selected. Further, 8 columns out of the selected sections 5 are selected by low-order 3 bits Y0-Y2 of a column address signal out of address signals AD of a defective cell being coincidence-detected. Thereby, a block A is replaced by the section 15-1 of the spare cell array 15. COPYRIGHT: (C)2003,JPO
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