Method for producing a microelectromechanical device and microelectromechanical device

摘要

The invention relates to a method for producing a micro-electromechanical device in a material substrate suitable for producing integrated electronic components, in particular a semiconductor substrate, wherein a material substrate (12,14,16) is provided on which at least one surface structure (26) is to be formed during production of the device. An electronic component (30) is formed in the material substrate (12,14,16) using process steps of a conventional method for producing integrated electronic components. A component element (44) defining the position of the electronic component (30) and/or required for the function of the electronic component (30) is selectively formed on the material substrate (12,14,16) from an etching stop material acting as an etching stop in case of etching of the material substrate (12,14,16) and/or in case of etching of a material layer (52) disposed on the material substrate (12,14,16). When the component element (44) of the electronic component (30) is implemented, a bounding region (48) is also formed on the material substrate (12,14,16) along at least a partial section of an edge of the surface structure (26), wherein said bounding region bounds said partial section. The material substrate (12,14, 16) thus implemented is selectively etched for forming the surface structure (26), in that the edge of the bounding region (48) defines the position of the surface structure (26) to be implemented on the material substrate (12, 14,16).

主权项

1. A micro-electromechanical device comprising:
a material substrate including a surface structure located on a surface of the material substrate, wherein the surface structure comprises a depression having a vertical depression wall extending vertically from the surface of the material substrate into the material substrate, wherein a position of the depression is laterally defined by a first edge defined by the depression wall and the surface of the material substrate; an electronic component arranged in the material substrate, wherein the electronic component comprises a component element having a third edge which defines a position of the electronic component in a predetermined relation to the first edge; an etching stop material deposited on the material substrate or a material layer that is disposed on the material substrate; a chamber; and a bridging region, wherein the material substrate has a bottom side and a top side, wherein the depression of the surface structure is formed in the top side of the material substrate, wherein the chamber is arranged in the bottom side of the material substrate, wherein, within the bridging region, the top side of the material substrate bridges the chamber, wherein the depression of the surface structure is arranged within the bridging region of the material substrate, wherein the etching stop material is arranged so as to provide the third edge of the component element of the electronic component and a bounding region having a second edge extending along at least a partial section of the first edge, wherein positions of the second edge and third edge have a predetermined relation relative to each other, and wherein the second edge of the bounding region defines, on the material substrate, a position of the first edge in a predetermined relation to the third edge of the component element.