| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive photosensitive resin composition having high sensitivity and high resolution and ensuring a small reduction in film thickness of an unexposed region after development and to provide a semiconductor device. <P>SOLUTION: The positive photosensitive resin composition comprises a polyamic acid resin (A) represented by formula (1), a compound (B) which generates an acid under light, a compound (C) which further generates an acid in the presence of an acid and a solvent (D). In the formula (1), R<SB>1</SB>and R<SB>2</SB>are each one selected from H, a 2-20C alkoxycarbonyl, a 2-20C alkoxyalkyl, a 1-10C alkyl substituted silyl, tetrahydropyranyl and tetrahydrofuranyl, and 5-80% of all symbols R<SB>1</SB>and R<SB>2</SB>are each a 2-20C alkoxycarbonyl, a 2-20C alkoxyalkyl, a 1-10C alkyl substituted silyl, tetrahydropyranyl or tetrahydrofuranyl and may be the same or different; each X is a tetravalent cyclic compound group; each Y is a divalent cyclic compound group; Z is a group of formula (2) (where R<SB>3</SB>and R<SB>4</SB>are each a divalent organic group and each R<SB>5</SB>and each R<SB>6</SB>are each a monovalent organic group); each G is an aliphatic group or a cyclic compound group having at least one alkenyl or alkynyl group; a and b represent mole fraction, a+b=100 mol%, a=50-100 mol% and b=0-40 mol%; and n=2-300. <P>COPYRIGHT: (C)2003,JPO |
