| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-frequency single electron transistor circuit in which a high frequency input terminal and an output terminal are separated without increasing the number of circuit, and an output signal that is in proportion to admittance of a single electron transistor is acquired. SOLUTION: In a micro conductive region 7 in which a charge energy of a single electron is at the same or higher level as a heat energy at an operation temperature, tunnel barriers 5 and 6 are provided. The tunnel barrier 5 is connected to a first terminal (a high frequency input terminal) 1. The tunnel barrier 6 is grounded through a capacitor 9, and further connected to a second terminal (a high frequency output terminal) 3 through an inductor 8. COPYRIGHT: (C)2003,JPO
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