| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate cooling method in a vacuum film deposition apparatus in which the throughput accompanied by the cooling treatment is not reduced, or any losses of a material for vapor deposition accompanied by cooling is not brought about. SOLUTION: A substrate W1 is disposed in a film deposition zone A1, and a film is deposited on the substrate W1. After a predetermined film deposition time is elapsed, the substrate W1 is carried to a cooling zone A2, and at the same time, the other substrate W2 cooled in a cooling zone A2 is carried in the film deposition zone A1, and a film is deposited on the substrate W2. The substrate W1 at a raised temperature is held in the cooling zone A2 between a cooling plate 22c and a holding plate 26b, and cooled. The film deposition and the cooling treatment are performed again by replacing the two substrates W1 and W2, and the film deposition of a predetermined film thickness on the two substrates W1 and W2 is successively completed by repeating the replacement of the substrates by the predetermined number of times. COPYRIGHT: (C)2003,JPO
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