GROUP III-V NITRIDE SEMICONDUCTOR MULTILAYER STRUCTURE AND ITS PRODUCTION PROCESS

摘要

A multilayer structure having a GaN semiconductor crystal growth layer of high quality in which a crystal growth layer of a group III-V nitride semiconductor such as GaN is formed over a substrate with a buffer layer of AlxGa1-xN (0<x<1) interposed between the crystal growth layer and the substrate. A method for producing such a structure is also disclosed in which a buffer layer of AlxGa1-xN (0<x<1) is formed on a substrate at a growth temperature of 600 to 900°C and a crystal growth layer of a III-V nitride semiconductor is formed on the buffer layer.