NONVOLATILE MEMORY DEVICE, STORAGE DEVICE HAVING THE SAME, AND OPERATION METHOD THEREOF

摘要

According to the present invention, a nonvolatile memory device comprises a plurality of strings connected between a bit line and a common source line, wherein the plurality of strings comprises pillars penetrating word lines stacked in a direction vertical to a silicon substrate, wherein each of the plurality of strings comprises a plurality of memory cells. An operating method of the nonvolatile memory device comprises: a step of applying set voltage to floated word lines; a step of applying at least one word line voltage needed for an operation to the word lines; and a step of applying a plurality of recovery voltages having different voltage levels from each other to a plurality of recovery areas grouped with the word lines, respectively.