| 摘要 |
Provided are a manufacturing method of substrate grown graphene, and substrate grown graphene. The manufacturing method of substrate grown graphene comprises the following steps of: (a) arranging a metal layer on a substrate; (b) supplying etching gas and carbon-containing gas, and conducting rapid thermal chemical vapor deposition (RTCVD); (c) supplying etching gas for metal when supplying the carbon-containing gas, and growing graphene on the metal layer; and (d) growing graphene on the substrate without having the metal layer by continuously removing all of the metal in the metal layer by the etching gas. |
