QUANTUM NANO-COMPOSITE SEMICONDUCTOR LASER AND QUANTUM NANO-COMPOSITE ARRAY

摘要

Quantum wires (11) are formed by III-V compound selective growth on V-grooves of a semiconductor substrate with the V-grooves each extending perpendicularly to the direction Is of the propagation of a laser beam to be oscillated and arranged parallel to the direction Is. The quantum wires (11) are active layer regions arranged parallel to the direction Is with pitches that are each equal to an integral multiple of 1/4 of the in-medium wavelength in the laser active layer and each having an infinite length with respect to the stripe width of the laser. The quantum nano-composite semiconductor laser has at least one, desirably both of a low threshold and a stable oscillation frequency more satisfiable than those of conventional ones.