发明名称 |
RAISED EXTENSION STRUCTURE FOR HIGH PERFORMANCE CMOS |
摘要 |
In a process of fabricating on a substrate a CMOS semiconductor device having a gate electrode, a raised source, and a raised drain, the improvement comprising further incorporating a raised extension, comprising: providing a silicon surface on an insulator layer; proving a gate adjacent to an intended source/drain region; providing an offset spacer adjacent to the gate; growing a source/drain region by selective epitaxy; forming an extension with one or more dopants by ion implantation; and forming a hdd spacer.
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申请公布号 |
US2003166323(A1) |
申请公布日期 |
2003.09.04 |
申请号 |
US20020085055 |
申请日期 |
2002.03.01 |
申请人 |
INFINEON TECHNOLOGIES NORTH AMERICA CORP. |
发明人 |
VIETZKE DIRK;SCHAFBAUER THOMAS;BRIGHTEN JAMES;EHRENWALL BIRGIT VON |
分类号 |
H01L21/336;H01L29/78;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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