| 摘要 |
A nonvolatile memory device for which an endurance test can be performed in a short time without requiring an apparatus for exclusive use for generating a reference current. The nonvolatile memory includes a memory cell for holding binary data and outputting, upon reading therefrom, first current or second current which is lower than the first current in response to the binary data, a reference circuit for generating reference current lower than the first current but higher than the second current, a sense amplifier for comparing the output current of the memory cell with the reference current to reproduce binary data, and a reference switching circuit for selectively switching the reference current to be generated by the reference circuit to a normal current, a higher current which is higher than the normal current or a lower current which is lower than the normal current. <IMAGE> |
