PLASMA TREATING APPARATUS AND PLASMA TREATING METHOD

摘要

In a plasma treating apparatus for carrying out a plasma treatment over a silicon wafer (6) having a protective tape (6a) stuck to a circuit formation face, the silicon wafer (6) is mounted on a mounting surface (3d) which is provided on an upper surface of a lower electrode (3) formed of a conductive metal with the protective tape (6a) turned toward the mounting surface (3d). When a DC voltage is to be applied to the lower electrode (3) by a DC power portion (18) for electrostatic adsorption to adsorb and hold the silicon wafer (6) onto the lower electrode (3) in the plasma treatment, the protective tape (6a) is utilized as a dielectric for the electrostatic adsorption. Consequently, the dielectric can be thinned as much as possible and the silicon wafer (6) can be held by a sufficient electrostatic holding force.