| 发明名称 |
BUMP FABRICATION PROCESS |
| 摘要 |
The present invention provides a bump fabrication process. After forming an under bump metallurgy (UBM) layer and bumps in sequence over the substrate, the under bump metallurgy layer that is not covered by the bumps is etched with an etchant. The etchant mainly comprises sulfuric acid and de-ionized water. The etchant can etch the nickel-vanadium layer of the UBM layer without damaging the bumps.
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| 申请公布号 |
US2003166330(A1) |
申请公布日期 |
2003.09.04 |
| 申请号 |
US20030248716 |
申请日期 |
2003.02.12 |
| 申请人 |
TONG HO-MING;LEE CHUN-CHI;FANG JEN-KUANG;HUANG MIN-LUNG;CHEN JAU-SHOUNG;SU CHING-HUEI;WENG CHAO-FU;CHOU YU-CHEN;WU TSUNG-HUA;TAO SU |
发明人 |
TONG HO-MING;LEE CHUN-CHI;FANG JEN-KUANG;HUANG MIN-LUNG;CHEN JAU-SHOUNG;SU CHING-HUEI;WENG CHAO-FU;CHOU YU-CHEN;WU TSUNG-HUA;TAO SU |
| 分类号 |
C23F1/26;C25F3/02;H01L21/3213;H01L21/60;H05K3/34;(IPC1-7):H01L21/44;H01L21/48;H01L21/50 |
主分类号 |
C23F1/26 |
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