METHOD OF CONTROLLING METAL ETCH PROCESSES, AND SYSTEM FOR ACCOMPLISHING SAME

摘要

A method of using scatterometry measurements to determine and control conductive interconnect 30 profiles is disclosed. In one embodiment, the method comprises providing a library of optical characteristic traces, each of which correspond to a grating structure comprised of a plurality of conductive interconnects having a known profile, providing a substrate 32 having at least one grating structure 50 formed thereabove, the formed grating structure 50 comprised of a plurality of conductive interconnects 30 having an unknown profile, and illuminating the formed grating structure 50. The method further comprises measuring light reflected off of the grating structure 50 to generate an optical characteristic trace for the formed grating structure 50 and determining a profile of the conductive interconnects 30 comprising the formed grating structure 50 by correlating the generated optical characteristic trace to an optical characteristic trace from the library. In another embodiment, the method disclosed herein comprises comparing a generated optical characteristic trace of conductive interconnects having an unknown profile to a target trace established for conductive interconnects 30 having an ideal or acceptable profile.