摘要 |
A method of supplying deuterium to MOSFET at low cost and supplying deuterium precisely to a determined depth, in a process of supplying deuterium to MOSFET. The method comprises the steps of: forming an oxide film on a silicon substrate, forming a polysilicon electrode film on the oxide film, and supplying deuterium ions by an ion implanter on the interface of the oxide film 4 and the silicon substrate via the polysilicon electrode film.
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