| 摘要 |
<p>A method for dividing a semiconductor wafer wherein a semiconductor wafer (W) with circuits in many regions sectioned by streets is divided into semiconductor chips each having a circuit. The circuit face of the semiconductor wafer (W) is covered with a tape member (10), and a part of the tape member (10) covering the top of the street is removed by dicing to form a cut groove (11). The semiconductor wafer (W) clear of the part of the tape member (10) covering the top of the street is chemically etched to corrode the street and thus divided into individual semiconductor chips. This economical method enables formation of high-quality chips free of cracks or stresses.</p> |
