| 摘要 |
<p>An apparatus including a volume of phase change material (290) disposed between a first conductor (140) and a second conductor (315) on a substrate, and a plurality of electrodes (2300) coupled to the volume of phase change material and the first conductor is disclosed constituting a programmable memory device. Further described is a method of manufacturing including introducing, over a first conductor on a substrate, a plurality of electrodes coupled to the first conductor, introducing a phase change material preferably of chalcogenide type over the plurality of electrodes and in electrical communication with the plurality of electrodes, and introducing a second conductor over the phase change material and coupled to the phase change material.</p> |
