发明名称 CRITICAL DIMENSION CONTROL USING FULL PHASE AND TRIM MASKS
摘要 <p>To print sub-wavelength features on a wafer, a mask set including a full phase PSM (FPSM) and a corresponding trim mask can be used. Phase assignments on the FPSM can result in some feature definition with the trim mask, particularly in non-critical areas. Unfortunately, this limited feature definition can cause significant critical dimension (CD) variations in these non-critical areas. Undesirable critical dimension (CD) variations can be better controlled, even with substantial mask misalignment, by defining multiple feature edge portions with the trim mask in non-critical areas, such as T-intersections, elbows, and other types of intersecting lines.</p>
申请公布号 WO2003073166(P1) 申请公布日期 2003.09.04
申请号 US2003005486 申请日期 2003.02.25
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