| 摘要 |
<p>An integrated inductor (20) may be formed over a substrate (12). An aperture may be formed by a backside etch through the semiconductor substrate (12) underneath the integrated inductor (20). The aperture (14) may then be filled with a dielectric material (16). As a result of the removal of the underlying substrate material, magnetic and capacitive coupling of the inductor to the substrate may be reduced. In addition, in some cases, the presence of the dielectric may facilitate attachment of the resulting die to a leadframe and package without degrading the inductor's performance and may provide better structural support.</p> |
