Method of forming an ITO layer on a heat-sensitive substrate

摘要

A method of forming an indium tin oxide (ITO) layer on a heat-sensitive substrate. An amorphous ITO layer is formed on the substrate by a sputtering process, wherein the temperature of the sputtering process is controlled at room temperature and, in situ, hydrogen gas with a flow rate of 1~5 sccm is introduced in the sputtering process. Part of the amorphous ITO layer is removed by an oxalic acid solution to form an amorphous ITO pattern on the substrate. A heat treatment whose temperature is below 150° C. is performed to turn the amorphous ITO pattern into a crystalline ITO layer. Thus, a crystalline and flat ITO layer can be formed on the heat-sensitive substrate.