发明名称 FARADAY SHIELDS AND PLASMA WAFER PROCESSING
摘要 <p>An improved deposition baffle (30), that is provided to protect a dielectric window from conductive deposits, is provided in high-density-plasma apparatus having slots (31) with features (34) therein ehich spatially distribute the transmitted RF power density through a baffle. The features form connections and current paths across the slot boundaries on the side of the baffle that faces the plasma, away from the window through which a coil couples RF power, thereby minimizing interference with the inductive coupling. In one embodiment, bridges (34) across the slots (31) on the plasma side of the baffle improve the flux distribution through the babble. In another embodiment, blades (37) in and parallel to the slots, on the coil side of the baffle but which are supported by connections on the plasma side of the baffle, reduce the formation of plasma in the slots and prevents resputtering of material from the slot boundaries. In a plasma source with a deposition baffle, plasma ignited at low power levels within a wide pressure range up to 20 mTorr with a combination of RF power of at least 300 watts, but less than 600 watts, and the ramping of DC power on a target or other electrode from 0 watts to up to a level of not more than approximately 20 watts over a period of several seconds.</p>
申请公布号 WO2003073460(P1) 申请公布日期 2003.09.04
申请号 US2003004830 申请日期 2003.02.19
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