发明名称 NOVEL PLANARIZATION METHOD FOR MULTI-LAYER LITHOGRAPHY PROCESSING
摘要 <p>The present invention is directed towards contact planarization methods that can be used to planarize substrate (32) surfaces having a wide range of topographic feature (34) densities for lithography applications. These processes use thermally curable, photo-curable, or thermoplastic materials to provide globally planarized surfaces (38) over topographic substrate surfaces for lithography applications. Additional coating(s) with global planarity and uniform thickness can be obtained on the planarized surfaces. These inventive methods can be utilized with single-layer, bilayer, or multi-layer processing involving bottom anti-reflective coatings, photoresists, hardmasks, and other organic and inorganic polymers in an appropriate coating sequence as required by the particular application. More specifically, this invention produces globally planar surfaces for use in dual damascene and bilayer processes with greatly improved photolithography process latitude. The invention further provides globally planar surfaces to transfer patterns using imprint lithography, nano-imprint lithography, hot-embossing lithography and stamping pattern transfer techniques.</p>
申请公布号 WO2003073164(P1) 申请公布日期 2003.09.04
申请号 US2003006119 申请日期 2003.02.25
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