| 发明名称 |
CRYSTAL MANUFACTURING METHOD |
| 摘要 |
A method for growing a crystal for example, a GaN compound semiconductor crystal on a substrate, comprising the steps of forming a first crystal layer GaN buffer layer, a second crystal layer GaN intermediate layer, and a third crystal layer GaN thick-film layer. In the three steps, the crystal layers are formed under different conditions, respectively.
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| 申请公布号 |
WO03073484(A1) |
申请公布日期 |
2003.09.04 |
| 申请号 |
WO2002JP11771 |
申请日期 |
2002.11.12 |
| 申请人 |
NIKKO MATERIALS CO., LTD.;SASAKI, SHINICHI;NAKAMURA, MASASHI;SATO, KENJI |
发明人 |
SASAKI, SHINICHI;NAKAMURA, MASASHI;SATO, KENJI |
| 分类号 |
C30B29/38;C30B25/02;C30B25/18;H01L21/20;H01L21/205;(IPC1-7):H01L21/20;C23C16/34 |
主分类号 |
C30B29/38 |
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