A flexible hybrid memory element

摘要

A memory cell apparatus includes a flexible hybrid memory element. The flexible hybrid memory element includes a flexible first conductive layer Ä320Ü formed adjacent to a flexible substrate Ä310Ü. A flexible diode structure Ä330Ü is formed adjacent to the flexible first conductor Ä320Ü. A flexible switch Ä350Ü is formed adjacent to the flexible diode structure Ä330Ü, A flexible second conductive layer Ä360Ü is formed adjacent to the flexible switch Ä350Ü. The flexible switch Ä350Ü is generally formed from an organic material. The flexible diode structure Ä330Ü is generally formed from a disordered, inorganic material. The flexible switch Ä350Ü can be formed to create a high resistance path when a threshold amount of current is passed through the flexible switch Ä330Ü, or the flexible switch Ä330Ü can be formed to create a low resistance path when a threshold amount of current is passed through the flexible switch Ä330Ü. The method includes depositing a flexible first conductive layer Ä320Ü on a flexible substrate Ä310Ü. A flexible disordered inorganic material is deposited on the flexible first conductor Ä320Ü forming a plurality of flexible diode structures Ä330Ü. A flexible organic material is deposited on the flexible disordered inorganic material, forming a plurality of flexible switches Ä350Ü adjacent to the plurality of flexible diode structures Ä330Ü. A flexible second conductor Ä360Ü is deposited on the flexible organic material.