| 摘要 |
PURPOSE: An apparatus for producing plasma is provided to easily control an etch rate and remarkably increase an etch rate by controlling a period for turning on/off power or a duty ratio. CONSTITUTION: A power supply(300) is prepared. A reaction chamber(308) receives power from the power supply and generates plasma, containing at least one sample(310). A power supply unit supplies the power from the power supply to the reaction chamber. A control unit(320) turns on/off the power, coupled to the power supply. The control unit controls the period for turning on/off the power or duty ratio to control the etch rate using plasma.
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