GAS FLOWING DEVICE AND METHOD IN CLEANING PROCEDURE OF TUNGSTEN SILICIDE DEPOSITION EQUIPMENT

摘要

PURPOSE: A gas flowing device and its method in cleaning procedure of tungsten silicide deposition equipment are provided to prevent the lifetime of heaters from being reduced by an arcing phenomenon by using nitrogen gas in the cleaning process of the tungsten silicide deposition equipment. CONSTITUTION: A silicon source gas line and a silicon source mass flow controller for a tungsten silicide layer are prepared. A tungsten source gas line and a tungsten source mass flow controller for the tungsten silicide layer are prepared. A cleaning gas line and a cleaning gas controller introduce cleaning gas to the inside of a tungsten silicide chamber before the tungsten silicide layer is deposited. The silicon source gas line, the tungsten source gas line, the cleaning gas line and the chamber are purged by an argon gas line. A base nitrogen gas line is positioned under a susceptor for loading a wafer into the chamber for depositing the tungsten silicide layer. The base nitrogen gas line applies heat to the susceptor and makes nitrogen gas flow to the outer circumferential surface of the heater. The cleaning gas is introduced to the inside of the chamber. Nitrogen gas is introduced to the outer circumferential surface of the heater. Radio frequency(RF) power is applied while the cleaning gas and the nitrogen gas are consecutively introduced.