CERAMIC SUBSTRATE FOR SEMICONDUCTOR MANUFACTURING AND INSPECTING DEVICES, AND METHOD OF MANUFACTURING THE CERAMIC SUBSTRATE

摘要

An object of the present invention is to provide a ceramic substrate for a semiconductor-producing/examining device, in which it is possible to promptly raise its temperature, a heating face thereof has a small temperature variation, and no semiconductor wafer and the like is damaged or distorted by thermal impact. The present invention is a ceramic substrate for a semiconductor-producing/examining device having a resistance heating element formed on a surface thereof or inside thereof, wherein a projected portion for fitting a semiconductor wafer is formed along the periphery thereof and a large number of convex bodies, which make contact with the semiconductor wafer, are formed inside the projected portion.