发明名称 HIGH SPEED MEMORY SYSTEM
摘要 PURPOSE: A high speed memory system is provided to match a terminal of a memory bus by using a terminal circuit included in a memory device or a chip set, and to reduce an impedance mismatching at a branch by using a line impedance of a memory bus and a stub impedance of a memory module so that it can enhance a high speed bus operation feature. CONSTITUTION: The system comprises a chip set(110), the first and the second memory module connector(150, 160), the first and the second memory module(120, 130), and a bus(170). The chip set(110) is mounted on a circuit board. The first and the second memory module connector(150, 160) are also mounted on the circuit board. The first and the second memory module(120, 130) are inserted into the first and the second memory module connector(150, 160), respectively. The bus(170) is connected to the chip set(110), the first and the second memory module connector(150, 160), and the first and the second memory module(120, 130) via one branch. The first and the second memory module(120, 130) include at least one memory device, respectively, which is connected to the bus(170) via a stub line and a stub resistor. At this time, the impedance of the bus(170) is lower than that of the stub line.
申请公布号 KR20030071008(A) 申请公布日期 2003.09.03
申请号 KR20020010506 申请日期 2002.02.27
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, JAE JUN;PARK, MYEON JU;SO, BYEONG SE
分类号 G06F13/00;G11C5/00;G11C5/06;G11C7/10;H05K1/02;H05K1/14;(IPC1-7):G06F13/00 主分类号 G06F13/00
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