发明名称 Mounting structure of high-frequency semiconductor apparatus and its production method
摘要 In a high-frequency circuit having a substrate (3, 5) having a high-frequency transmission line (4) and an dielectric resonator (1) formed on said substrate (3, 5) so that said dielectric resonator (1) and said high-frequency transmission line (4) may be coupled electro-magnetically to each other, a hole part (2) or a cavity part is formed at a part (3) of said substrate (3, 5) and a dielectric resonator (1) is embedded in said hole part (2) or said cavity part. In the same object, a high-frequency circuit having a dielectric resonator (1) is produced by the step for forming a high-frequency transmission line (4) on a substrate (3, 5), the step for forming a hole part (2) or a cavity part on a part of the substrate (3, 5), and the step for mounting a dielectric resonator (1) in the hole par formed on the surface of the substrate (3, 5). <IMAGE>
申请公布号 EP1326300(A3) 申请公布日期 2003.09.03
申请号 EP20020023038 申请日期 2002.10.16
申请人 HITACHI, LTD. 发明人 SASADA, YOSHIYUKI
分类号 C04B35/00;H01P1/20;H01P7/10;H01P11/00;H03B5/18;H04B1/40 主分类号 C04B35/00
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