METHOD FOR FABRICATING NON-VOLATILE MEMORY DEVICE AND STRUCTURE THEREOF

摘要

PURPOSE: A method for fabricating a non-volatile memory(NVM) device is provided to prevent a bitline for forming contact hole from being changed by forming a contact pad connecting two unit cell strings and by forming the bitline on the contact pad so that a contact formation region is indicated by the bitline. CONSTITUTION: The first insulation layer is formed on the entire surface of a plurality of unit cell strings(200a,200b) and is etched through a photolithography process to form a contact pad(210) hole that connects the contact formation regions of two adjacent unit cell strings. A conductive material is formed in the contact pad hole to form the contact pad. The second insulation layer is formed on the cell string including the first insulation layer and is etched through a photolithography process to form a bitline trench pattern. A contact for connecting the cell string with the bitline is formed on the contact pad and under the bitline trench pattern. A conductive material is formed on the contact and the bitline trench pattern to form the bitline.