| 摘要 |
PURPOSE: A method for fabricating a semiconductor integrated device is provided to integrate a digital integrated circuit(IC), an analog IC and a radio frequency(RF) IC, by embodying an AlGaAs/GaAs heterojunction bipolar transistor(HBT) semiconductor integrated device for ultrahigh frequency telecommunication. CONSTITUTION: A base region is formed in a predetermined region of a semiconductor substrate(31). The first insulation layer is formed in a defined base region and on the entire substrate. An emitter region is formed in the first insulation layer in the base region. An emitter electrode is formed in the emitter region. A base electrode is formed on the base region. A collector region is formed in the first insulation layer to fabricate a collector electrode. A predetermined region of the emitter electrode and collector electrode is exposed to form the first metal interconnection. The second insulation layer planarized by the first metal interconnection process is formed. A contact hole is formed in the second insulation layer and a metal interconnection is deposited. The metal interconnection is lifted off to form the second metal interconnection connected to the first metal interconnection.
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