| 摘要 |
In an N-MOSFET having a Double RESURF structure, an n-drift layer and a p-base layer are formed to be adjacent to each other in the surface of a p-semiconductor active layer. An n+-drain layer and a p-RESURF layer are formed in the surface of the drift layer. An n+-source layer and a p+-contact layer are formed to be adjacent to each other in the surface of the base layer. A gate electrode is arranged through a gate insulating film on that region of the base layer, which is located between the drift layer and the source layer. The RESURF layer is doped with a p-carrier impurity at a dose that is set to be gradually higher from the drain layer side to the base layer side.
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