发明名称 |
Method of doping silicon, metal doped silicon, method of making solar cells, and solar cells |
摘要 |
A low temperature process for forming a metal doped silicon layer in which a silicon layer is deposited onto a substrate at low temperatures, with a metal doping layer then deposited upon the silicon layer. This structure is then annealed at low temperatures to form a metal doped semiconductor having greater than about 1x1020 dopant atoms per cm3 of silicon.
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申请公布号 |
US6613653(B2) |
申请公布日期 |
2003.09.02 |
申请号 |
US20010029859 |
申请日期 |
2001.12.31 |
申请人 |
THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ARKANSAS |
发明人 |
NASEEM HAMEED A.;HAQUE M. SHAHIDUL;BROWN WILLIAM D. |
分类号 |
H01L31/04;H01L21/20;H01L31/0288;H01L31/18;H01L31/20;(IPC1-7):H01L21/20;H01L21/36 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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