| 摘要 |
The voltage regulating circuit, in particular for semiconductor memories, has a reference-voltage generator for generating a reference voltage, an in-phase element for providing a regulated voltage, and an error amplifier for forming a control loop. The in-phase element has a plurality of transistors which are permanently connected to one another on the control side and the load terminals of which are disconnectably connected, in dependence on the required drive strength, to a terminal that outputs the regulated voltage. The voltage regulating circuit is particularly suitable for supplying the voltage for embedded DRAM memories with an application-dependent storage capacity.
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