| 摘要 |
PURPOSE: A method for measuring a wafer temperature in an RTP(Rapid Thermal Processing) apparatus is provided to exactly and inexpensively measure the temperature of a wafer by using a pyrometer. CONSTITUTION: A wafer(140) is loaded in a chamber(110) of the RTP apparatus. After setting a plurality of measurement points in the wafer(140), the temperature and emissivity are measured by using a first pyrometer for directly measuring emissivity and for compensating the emissivity. Also, the temperature is measured by using a second pyrometer impossible to the emissivity compensation. The total temperature of the wafer(140) is then measured by compensating the temperature value of the second pyrometer using the temperature and emissivity of the first pyrometer as a compensation value.
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