发明名称 |
Semiconductor device and method for producing the same |
摘要 |
In producing a semiconductor device by annealing with laser light irradiation, while a linear laser light is scanned in a direction perpendicular to a line, the annealing is performed for a semiconductor material. In this state, since an anneal effect in a beam lateral direction corresponding to a line direction is 2 times or more different than that in the scanning direction, a plurality of semiconductor elements are formed along a line direction in which the linear laser light is irradiated. Also, a line direction connecting the source and drain region of a thin film transistor is aligned to the line direction of the linear laser light.
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申请公布号 |
US6613619(B2) |
申请公布日期 |
2003.09.02 |
申请号 |
US20010840167 |
申请日期 |
2001.04.24 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;KUSUMOTO NAOTO;TANAKA KOICHIRO |
分类号 |
H01L21/02;H01L21/20;H01L21/268;H01L21/336;H01L21/77;H01L27/12;H01L29/04;H01L29/786;(IPC1-7):H01L21/84 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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