发明名称 |
Compensation semiconductor component and method of fabricating the semiconductor component |
摘要 |
The semiconductor component is a charge carrier compensation component formed in a semiconductor body. A semiconductor basic body is disposed in the semiconductor body. The basic body has at least one compensation layer which adjoins a boundary layer and first regions of a first conductivity type and second regions of a second conductivity type are provided along a layout grid. A total quantity of charge of the first regions corresponds approximately to a total quantity of charge of the second regions. At least one semiconductor layer in the semiconductor body adjoins the semiconductor basic body at the boundary layer. A multiplicity of doped regions are embedded in the first surface of the semiconductor layer which form a grid for a cell array of the semiconductor component. The grid in the semiconductor layer is aligned independently of the layout grid in the semiconductor basic body.
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申请公布号 |
US6614090(B2) |
申请公布日期 |
2003.09.02 |
申请号 |
US20010974650 |
申请日期 |
2001.10.09 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
DEBOY GERALD;STRACK HELMUT |
分类号 |
H01L21/336;H01L29/06;H01L29/78;(IPC1-7):H01L23/58 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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