METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to minimize defects like a bridge generated in a subsequent process by completely eliminating reaction byproducts generated in forming a spacer structure of a conductive pattern like a bitline through an oxidation process. CONSTITUTION: The first conductive material and a silicon nitride(220b) are sequentially stacked on a substrate wherein conductive patterns are interposed between the first conductive material and the silicon nitride. A spacer structure(224) made of silicon nitride is formed on the sidewall of the conductive patterns. The surface of the spacer structure and the conductive pattern is oxidized. An insulation layer is successively stacked on the conductive patterns, the spacer structure and the substrate. The insulation layer stacked between the conductive patterns is etched to form a self-align contact hole to which the surface of the spacer structure and the substrate is exposed. The second conductive material is filled in the self-align contact hole to form a self-align contact structure.