发明名称 Ascending staircase read technique for a multilevel cell NAND flash memory device
摘要 A method for resolving data to one stored level of N possible stored levels in a multi-level memory includes receiving an access address associated with a memory location of the multi-level memory and applying an ascending staircase read voltage to a word line associated with the access address. The method further includes detecting a sense signal produced on a sense line associated with the access address in response to the stored level and a value of the staircase read voltage, for each value of the ascending staircase read voltage, storing data responsive to the sense signal, and after application of a final value of the ascending staircase read voltage, producing an N-bit value corresponding to the one stored level stored in the memory location.
申请公布号 US6614683(B1) 申请公布日期 2003.09.02
申请号 US20010794480 申请日期 2001.02.26
申请人 ADVANCED MICRO DEVICES, INC. 发明人 PARKER ALLAN
分类号 G11C11/56;G11C16/26;(IPC1-7):G11C16/04 主分类号 G11C11/56
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