发明名称 |
Power supply circuit stably supplying power supply potential even to load consuming rapidly changing current and semiconductor memory device with same |
摘要 |
A power supply circuit according to the present invention includes: a potential difference amplifying circuit amplifying a potential difference between an internal power supply potential and a reference potential to output the amplified potential difference to a control node; a current supply transistor supplying a current according to a potential level of the control node to an internal power supply line; and a forced current supply control circuit forcibly performing current supply by the current supply transistor through adjustment of a potential level of the control node. The forced current supply control circuit begins forced current supply to the internal power supply line at the timing based on activation of a word line activation signal to be activated in advance of activation of a sense amplifier, which is a load.
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申请公布号 |
US6614707(B2) |
申请公布日期 |
2003.09.02 |
申请号 |
US20020157184 |
申请日期 |
2002.05.30 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KATO HIROSHI |
分类号 |
G11C11/407;G05F1/46;G05F1/56;G05F3/26;(IPC1-7):G11C7/00 |
主分类号 |
G11C11/407 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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