发明名称 Magnetoresistance effect film and method of forming same
摘要 A magnetoresistance effect film includes a substrate, a plurality of ferromagnetic particles disposed on the substrate, a nonmagnetic film deposited on the substrate and covering the plurality of ferromagnetic particles, and a pair of electrodes arranged on the nonmagnetic film, in which the resistance across the pair of electrodes is changed by applying a magnetic field. The magnetoresistance effect film is manufactured by vapor-depositing ferromagnetic particle starting material on a substrate at a temperature not exceeding 300° C., the starting material being vapor-deposited in an amount enough to cover the substrate surface to a thickness ranging from 0.5 to 15 nm, and, after formation of ferromagnetic particles on the substrate, vapor-depositing at a temperature not exceeding room temperature a nonmagnetic film over the ferromagnetic particles, the nonmagnetic film having a thickness ranging from 1 to 100 nm, and providing a pair of electrodes each at a predetermined position on the nonmagnetic film.
申请公布号 US6613448(B1) 申请公布日期 2003.09.02
申请号 US20000525318 申请日期 2000.03.13
申请人 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY 发明人 AKINAGA HIROYUKI;OSHIMA MASAHARU;MIZUGUCHI MASAKI
分类号 H01F10/08;C23C14/06;G01R33/09;G11B5/37;G11B5/39;H01F10/193;H01F10/32;H01L43/08;(IPC1-7):B32B15/04;B32B15/16;G11B5/127 主分类号 H01F10/08
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